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瑞薩電子靜態(tài)隨機(jī)存取存儲器選型表及現(xiàn)貨

來源：瑞薩電子代理商-中芯巨能| 發(fā)布日期：2025-02-07 18:00:01 瀏覽量：

瑞薩電子高級低功耗靜態(tài)隨機(jī)存取存儲器，通過采用獨家技術(shù)優(yōu)化了存儲單元結(jié)構(gòu)，使其軟錯誤抵抗力比傳統(tǒng)全CMOS存儲單元高出500倍以上。瑞薩電子代理商-中芯巨能為您提供瑞薩電子靜態(tài)隨機(jī)存取存儲器選型表及現(xiàn)貨。如需產(chǎn)品規(guī)格書、選型指導(dǎo)、樣片測試、采購、BOM配單等需求，請加客服微信：13310830171。

瑞薩電子靜態(tài)隨機(jī)存取存儲器選型表及現(xiàn)貨

型號描述溫度范圍
R1LP0108E1Mb Advanced LPSRAM (128k word x 8bit)-40 to +85°C
R1LP0408D4Mb Advanced LPSRAM (512-kword × 8-bit)-40 to +85°C
R1LP5256E256Kb Advanced LPSRAM (32k word x 8bit)-40 to +85°C
R1LV0108E1Mb Advanced LPSRAM (128k word x 8bit)-40 to +85°C
R1LV0208BSA2Mb Advanced LPSRAM (256k word x 8bit)-40 to +85°C
R1LV0216BSB2Mb Advanced LPSRAM (128k word x 16bit)-40 to +85°C
R1LV5256E256Kb Advanced LPSRAM (32k word x 8bit)-40 to +85°C
RMLV0408E4Mb Advanced LPSRAM (512-kword × 8-bit)-40 to +85°C
RMLV0414E4Mb Advanced LPSRAM (256-kword × 16-bit)-40 to +85°C
RMLV0416E4Mb Advanced LPSRAM (256-kword × 16-bit)-40 to +85°C
RMLV0808BGSB8Mb Advanced LPSRAM (1024k word × 8bit)-40 to +85°C
RMLV0816BGBG8Mb Advanced LPSRAM (512k word × 16bit)-40 to +85°C
RMLV0816BGSA8Mb Advanced LPSRAM (512k word × 16bit / 1024k word x 8bit)-40 to +85°C
RMLV0816BGSB8Mb Advanced LPSRAM (512k word × 16bit)-40 to +85°C
RMLV0816BGSD8Mb Advanced LPSRAM (512k word × 16bit / 1024k word x 8bit)-40 to +85°C
RMLV1616A16Mb Advanced LPSRAM (1M word × 16bit / 2M word x 8bit)-40 to +85°C
RMLV1616A-U16Mbit LPSRAM (1M word × 16bit / 2M word x 8bit)-40 to +85°C
RMLV3216A32Mb Advanced LPSRAM (2M word × 16bit / 4M word x 8bit)-40 to +85°C
RMWV3216A32Mb Advanced LPSRAM (2M word × 16bit)-40 to +85°C
RMWV6416A64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit)-40 to +85°C

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